AT29C010A

Features: • Fast Read Access Time - 70 ns• 5-Volt-Only Reprogramming• Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector)Internal Address and Data Latches for 128-Bytes• Two 8 KB Boot Blocks with Lockout• Internal Progra...

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SeekIC No. : 004289915 Detail

AT29C010A: Features: • Fast Read Access Time - 70 ns• 5-Volt-Only Reprogramming• Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector)Internal Ad...

floor Price/Ceiling Price

Part Number:
AT29C010A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Fast Read Access Time - 70 ns
• 5-Volt-Only Reprogramming
• Sector Program Operation
        Single Cycle Reprogram (Erase and Program)
        1024 Sectors (128 bytes/sector)
        Internal Address and Data Latches for 128-Bytes
• Two 8 KB Boot Blocks with Lockout
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time - 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
        50 mA Active Current
        100 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ±10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges



Pinout

  Connection Diagram


Specifications

Temperature Under Bias............................. -55°C to +125°C
Storage Temperature.................................. -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground ............................. -0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................................... -0.6V to +13.5V



Description

The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, AT29C010A offers access times to 70 ns with power dissipation of just 275 mW over the commer-cial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. AT29C010A endurance is such that any sector can typically be writ-ten to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29C010A does not require high input voltages for programming. Five-volt-only commands determine the opera-tion of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C010A is performed on a sector basis; 128-bytes of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, AT29C010A will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle of AT29C010A has been detected, a new access for a read or program can begin.


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