AT29BV020

• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time - 120 ns
• Low Power Dissipation 15mAActiveCurrent 40 µA CMOS Standby Current
• Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 Bytes/Sector) Internal Address and Data Latches for 256 Bytes
• Two 8K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable ReadOnly Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology,the device offers access times to 120 ns, and a low 54 mW power dissipation. Whenthe device is deselected, the CMOS standby current is less than 40 µA. The deviceendurance is such that any sector can typically be written to in excess of 10,000 times.

The programming algorithm of AT29BV020 is compatible with other devices in Atmel's Low VoltageFlash family of products.