DescriptionThe AT25P1024W1-SI provides 1,048,576 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essen...
AT25P1024W1-SI: DescriptionThe AT25P1024W1-SI provides 1,048,576 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimized for us...
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The AT25P1024W1-SI provides 1,048,576 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT25P1024 is available in space saving 20-pin JEDEC SOIC and 8-pin leadless array (LAP) packages.
Features of the AT25P1024W1-SI are:(1)Serial Peripheral Interface (SPI) Compatible; (2)Supports SPI Modes 0 (0,0) and 3 (1,1); (3)2.1 MHz Clock Rate; (4)128-Byte Page Mode Only for Write Operations; (5)Low Voltage and Standard Voltage Operation 5.0 (VCC= 4.5V to 5.5V) 2.7 (VCC= 2.7V to 5.5V) 1.8 (VCC= 1.8V to 3.6V); (6)Block Write Protection Protect 1/4, 1/2, or Entire Array; (7)Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data Protection; (8)Self-Timed Write Cycle (5 ms Typical); (9)High Reliability Endurance: 100,000 Write Cycles Data Retention: >40 Years ESD Protection: >3000V; (10)20-Pin JEDEC SOIC and 8-Pin Leadless Array Package.
The absolute maximum ratings of the AT25P1024W1-SI can be summarized as:(1)Operating TemperatureL:-55°C to +125°C; (2)Storage Temperature:-65°C to +150°C; (3)Voltage on Any Pin with Respect to Ground:-1.0V to +7.0V; (4)Maximum Operating Voltage:6.25V; (5)DC Output Current:5.0 mA.
If you want to know more information such as the electrical characteristics of AT25P1024W1-SI ,please download the datasheet in www.seekdatasheet.com .