AT006N3-93

Features:

 Dual Control Voltages
 Low Insertion Loss
Broadband DC8 GHz
Small Low Cost "Chip on Board" Package



Pinout




Specifications

Characteristic	Value
RF Input Power (RF In)	10 mW > 500 MHz 4 mW @ 50 MHz
Control Voltage (VC)	+0.2 V, -10 V
Operating Temperature (TOP)	-40°C to +90°C
Storage Temperature (TST)	-65°C to +150°C
Thermal Resistance (JC)	25°C/W

Description

    The AT006N3-93GHz GaAs FET IC non-reflective bridged "T"attenuator provides up to 30dB of "nonreflective" attenuation. The control voltage requirements are 0 to -5 V.

    This attenuator AT006N3-93 has two independent voltage controls, which must be adjusted in a prescribed manner to obtain the desired attenuation under non-reflective conditions. Refer to the Application Notes section, "Dual Voltage Con-trolled VVA."

     Applications for these fast attenuators AT006N3-93 are AGC circuitsand variable level control in various military and telecom-munications systems.