AT006N3-10

Features:

 Dual Control Voltages
 Low Insertion Loss
 7 Lead Hermetic Package
Capable of Meeting MIL-STD Requirements⁵



Pinout




Specifications

Characteristic	Value
RF Input Power (RF In)	10 mW > 500 MHz 4 mW @ 50 MHz
Control Voltage (VC)	+0.2 V, -10 V
Operating Temperature (TOP)	-55°C to +125°C
Storage Temperature (TST)	-65°C to +150°C
Thermal Resistance (JC)	25°C/W

Description

    The AT006N3-01 is a GaAs IC FET non-reflective bridged "T" attenuator that provides over 30 dB of "matched" attenuation.This device has two independent bias controls which can be adjusted to obtain the desired atten-uation under matched conditions. The AT006N3-10 is the gullwing version of this device for surface mount app-lications.