AT004N3-11

Features:

Dual Control Voltages
Low Insertion Loss
8 Lead Hermetic Surface Mount Package
Capable of Meeting MIL-STD Requirements⁵



Pinout




Specifications

Characteristic	Value
RF Input Power (RF In)	10 mW > 500 MHz 4 mW @ 50 MHz
Control Voltage (VC)	+0.2 V, -10 V
Operating Temperature (TOP)	-55°C to +125°C
Storage Temperature (TST)	-65°C to +150°C
Thermal Resistance (QJC)	25°C/W

Description

The AT004N3-11 is a GaAs IC FET non-reflective bridged "T" attenuator. This device provides over 30 dB of"ma-tched" attenuation with the input and output VSWR less than 1.5:1 under all attenuation values. The applications of AT004N3-11 for these fast attenuators are AGC circuits and variable level control in high reliability and telecommunication systems.