AT-64023

Transistors Bipolar (BJT) Transistor Si

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AT-64023 Picture
SeekIC No. : 00208886 Detail

AT-64023: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ 69.2~94.37 / Piece | Get Latest Price
Part Number:
AT-64023
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~5
  • 5~25
  • 25~100
  • Unit Price
  • $94.37
  • $73.4
  • $69.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 2.2 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single Dual Emitter
Maximum Operating Frequency : 4000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : BeO
Packaging : Bulk    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 0.2 A
Packaging : Bulk
Configuration : Single Dual Emitter
Maximum Operating Frequency : 4000 MHz
Package / Case : BeO
Emitter- Base Voltage VEBO : 2.2 V


Features:

• High Output Power:
27.5 dBm Typical P1 dB at 2.0 GHz
26.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:
12.5 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Stripline Package






Specifications

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
Emitter-Base Voltage
V
2.2
VCBO
Collector-Base Voltage
V
40
VCEO
Collector-Emitter Voltage
V
20
IC
Collector Current
mA
200
PT
Power Dissipation [2,3]
mW
3
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200





Description

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent device AT-64023 uniformity,performance and reliability are produced by the use of ionimplantation,selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers.




Parameters:

Technical/Catalog InformationAT-64023
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition4GHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)200mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 110mA, 8V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Gain-
Power - Max3W
Compression Point (P1dB)27.5dBm ~ 26.5dBm
Package / CaseSurface Mount
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 64023
AT64023



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