AT-42085G

Transistors Bipolar (BJT) Transistor Si

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SeekIC No. : 00208778 Detail

AT-42085G: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ .7~.86 / Piece | Get Latest Price
Part Number:
AT-42085G
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~390
  • 390~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $.86
  • $.79
  • $.74
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V Configuration : Single Dual Emitter
Maximum Operating Frequency : 8000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Case 85
Packaging : Bulk    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 12 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V
Maximum Operating Frequency : 8000 MHz
Package / Case : Case 85


Parameters:

Technical/Catalog InformationAT-42085G
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)2dB ~ 3.5dB @ 2GHz ~ 4GHz
Current - Collector (Ic) (Max)80mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 35mA, 8V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain13.5dB ~ 9.5dB
Power - Max500mW
Compression Point (P1dB)20.5dBm ~ 20dBm
Package / Case*
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 42085G
AT42085G
516 1859 ND
5161859ND
516-1859



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