AT-42085

Features:

• High Output Power:
20.5 dBm Typical P_{1 dB} at 2.0 GHz
• High Gain at 1 dB
Compression:
14.0 dB Typical G_{1 dB} at 2.0 GHz
• Low Noise Figure:
2.0 dB Typical NF_O at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Low Cost Plastic Package





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.

The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications of AT-42085 include use in wireless systems as an LNA, gain
stage, buffer, oscillator, and mixer. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42085 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-42085 are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.