Transistors Bipolar (BJT) Transistor Si
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 12 V |
Emitter- Base Voltage VEBO : | 1.5 V | Maximum DC Collector Current : | 0.08 A |
DC Collector/Base Gain hfe Min : | 30 at 35 mA at 8 V | Configuration : | Single Dual Emitter |
Maximum Operating Frequency : | 8000 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | Case 70 |
Packaging : | Bulk |
Symbol |
Parameter |
Units |
Absolute Maximum[1] |
VEBO |
Emitter-Base Voltage |
V |
1.5 |
VCBO |
Collector-Base Voltage |
V |
20 |
VCEO |
Collector-Emitter Voltage |
V |
12 |
IC |
Collector Current |
mA |
80 |
PT |
Power Dissipation [2,3] |
mW |
600 |
Tj |
Junction Temperature |
°C |
200 |
TSTG |
Storage Temperature |
°C |
-65 to 200 |
Technical/Catalog Information | AT-42070 |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Frequency - Transition | 6GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
Current - Collector (Ic) (Max) | 80mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA, 8V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Gain | 14dB ~ 10.5dB |
Power - Max | 600mW |
Compression Point (P1dB) | 21dBm ~ 20.5dBm |
Package / Case | Surface Mount |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AT 42070 AT42070 |