AT-42070

Transistors Bipolar (BJT) Transistor Si

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AT-42070 Picture
SeekIC No. : 00204030 Detail

AT-42070: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ 16.13~23.42 / Piece | Get Latest Price
Part Number:
AT-42070
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $23.42
  • $18.22
  • $17.18
  • $16.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V Configuration : Single Dual Emitter
Maximum Operating Frequency : 8000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Case 70
Packaging : Bulk    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 12 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V
Maximum Operating Frequency : 8000 MHz
Package / Case : Case 70


Features:

• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P 1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:

15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product:
8.0 GHz Typical fT
• Hermetic Gold-ceramic
Microstrip Package





Specifications

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200





Description

Hewlett-Packard's AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter inger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.AT-42070 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42070 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-42070 are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.




Parameters:

Technical/Catalog InformationAT-42070
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.9dB ~ 3dB @ 2GHz ~ 4GHz
Current - Collector (Ic) (Max)80mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 35mA, 8V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain14dB ~ 10.5dB
Power - Max600mW
Compression Point (P1dB)21dBm ~ 20.5dBm
Package / CaseSurface Mount
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 42070
AT42070



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