AT-42035G

Transistors Bipolar (BJT) Transistor Si

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SeekIC No. : 00204006 Detail

AT-42035G: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ 3.13~5.22 / Piece | Get Latest Price
Part Number:
AT-42035G
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $5.22
  • $4.35
  • $3.48
  • $3.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V Configuration : Single Dual Emitter
Maximum Operating Frequency : 8000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Case 35 micro-X
Packaging : Bulk    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 12 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V
Maximum Operating Frequency : 8000 MHz
Package / Case : Case 35 micro-X


Parameters:

Technical/Catalog InformationAT-42035G
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)2dB ~ 3dB @ 2GHz ~ 4GHz
Current - Collector (Ic) (Max)80mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 35mA, 8V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain13.5dB ~ 10dB
Power - Max600mW
Compression Point (P1dB)21dBm ~ 20.5dBm
Package / Case*
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 42035G
AT42035G
516 1858 ND
5161858ND
516-1858



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