AT-42035

Features:

• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Cost Effective Ceramic
Microstrip Package





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation [2,3]	mW	600
Tj	Junction Temperature	°C	200
TSTG	Storage Temperature	°C	-65 to 200

Description

Hewlett-Packard's AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron
emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. AT-42035 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF,UHF, and microwave frequencies. An optimum noise match near 50 W up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42035 bipolar transistor is fabricated using Hewlett- Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-42035 are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.