AT-42010

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 12 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum DC Collector Current : 0.08 A
DC Collector/Base Gain hfe Min : 30 at 35 mA at 8 V
Maximum Operating Frequency : 8000 MHz
Package / Case : Case 100


Features:

• High Output Power:
12.0 dBm Typical P_{1 dB} at 2.0GHz
20.5 dBm Typical P_{1 dB} at 4.0GHz
• High Gain at
1dBCompression:
14.0 dB Typical G_{1 dB} at 2.0GHz
9.5 dB Typical G_{1 dB} at 4.0GHz
• Low Noise Figure: 1.9 dB Typical NFO at 2.0GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical f_T
• Hermetic Gold-ceramic
Microstrip Package




Specifications

Symbol	Parameter	Units	Absolute Maximum
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation[2,3]	mW	600
Tj	Junction Temperature		200
TSTG	Storage Temperature		-65 to 200

Description

Hewlett-Packard's AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many differentfunctions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. AT-42010 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz , makes this device easy to use as a low noise amplifier.

The AT-42010 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-42010 are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Parameters:

Technical/Catalog Information	AT-42010
Vendor	Avago Technologies US Inc.
Category	Discrete Semiconductor Products
Frequency - Transition	6GHz
Noise Figure (dB Typ @ f)	1.9dB ~ 3dB @ 2GHz ~ 4GHz
Current - Collector (Ic) (Max)	80mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 35mA, 8V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	13.5dB ~ 10dB
Power - Max	600mW
Compression Point (P1dB)	21dBm ~ 20.5dBm
Package / Case	Surface Mount
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AT 42010 AT42010