AT-42000

Features:

• High Output Power:
  21.0 dBm Typical P_{1 dB} at 2.0 GHz
  20.5 dBm Typical P_{1 dB} at 4.0 GHz
• High Gain at 1 dB
  Compression:
  15.0 dB Typical G_{1 dB} at 2.0 GHz
  10.0 dB Typical G_{1 dB} at 4.0 GHz
• Low Noise Figure: 1.9 dB
   Typical NF_O at 2.0 GHz
• High Gain-Bandwidth
   Product: 9.0 GHz Typical f_T



Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation [2,3]	mW	600
Tj	Junction Temperature	°C	200
TSTG	Storage Temperature	°C	-65 to 200

Description

    Hewlett-Packard's AT-42000 is a general purpose NPN bipolar transistor AT-42000chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.

    AT-42000 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W up to 1 GHz , makes this device easy to use as a
low noise amplifier.

    The AT-42000 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

    The recommended assembly procedure of AT-42000 is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, "Chip Use".