AT-41586

Features:

• Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
• High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
• Low Cost Surface Mount Package
• Tape and Reel Option Available





Pinout






Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	60
PT	Power Dissipation [2]	mW	500
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency per-formance.The AT-41586 is housed in a low cost surface mount .085"diameter plastic package.The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger in-terdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and mode-rate power applications. Applications of AT-41586 include use in wireless systems as an LNA, gain stage, buffer, os-cillator, and mixer. An optimum noise match near 50 W in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier.

The AT-41586 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) pro-cess. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of AT-41586.