AT-41511

Features:

• General Purpose NPN Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
• Characterized for 3, 5, and 8 Volt Use
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-and-Reel Packaging Option Available^[1]





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	50
PT	Power Dissipation [2,3]	mW	225
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-415 11 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 4 micron emitter-to-emitter pitch of these transistors yields high performance products of AT-41511 that can perform a mul-tiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power.

Optimized for best performace from a 5 to 8 volt bias supply, these transistors AT-41511 are also good performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier AT-41511 de-signs at 900 MHz yield 1 dB noise figures with 15 dB or more associated gain at a 5 V, 5 mA bias, with good gain and noise figure obtainable at biases as low as 2 mA.

The AT-415 series bipolar transistors are fabricated using Hewlett-Packard's 10 GHz fT Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and goldmetalization in the fab-rication of these devices.