Transistors Bipolar (BJT) Transistor Si
AT-41511-TR1G: Transistors Bipolar (BJT) Transistor Si
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 12 V |
Emitter- Base Voltage VEBO : | 1.5 V | Maximum DC Collector Current : | 0.05 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single Dual Emitter |
Maximum Operating Frequency : | 10000 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-143 |
Packaging : | Reel |
Technical/Catalog Information | AT-41511-TR1G |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz |
Current - Collector (Ic) (Max) | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Gain | 14.5dB ~ 9dB |
Power - Max | 225mW |
Compression Point (P1dB) | 14.5dB |
Package / Case | SOT-143-4, TO-253-4 |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AT 41511 TR1G AT41511TR1G 516 1568 2 ND 51615682ND 516-1568-2 |