AT-41511-TR1G

Transistors Bipolar (BJT) Transistor Si

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SeekIC No. : 00203998 Detail

AT-41511-TR1G: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ .14~.23 / Piece | Get Latest Price
Part Number:
AT-41511-TR1G
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.23
  • $.2
  • $.16
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single Dual Emitter
Maximum Operating Frequency : 10000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-143
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 12 V
DC Collector/Base Gain hfe Min : 30
Package / Case : SOT-143
Maximum DC Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum Operating Frequency : 10000 MHz


Parameters:

Technical/Catalog InformationAT-41511-TR1G
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain14.5dB ~ 9dB
Power - Max225mW
Compression Point (P1dB)14.5dB
Package / CaseSOT-143-4, TO-253-4
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 41511 TR1G
AT41511TR1G
516 1568 2 ND
51615682ND
516-1568-2



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