AT-41470

Features:

• Low Noise Figure:
  1.6 dB Typical at 2.0 GHz
  3.0 dB Typical at 4.0 GHz
• High Associated Gain:
  14.5 dB Typical at 2.0 GHz
  10.5 dB Typical at 4.0 GHz
• High Gain-Bandwidth
   Product: 8.0 GHz Typical f_T
• Hermetic, Gold-ceramic
   Microstrip Package



Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	60
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	200
TSTG	Storage Temperature	°C	-65 to 200

Description

Hewlett-Packard's AT-41470 is a general purpose NPN bipolar transistor that offers excellent high frequency per-formance. The AT-41470 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 mic-ron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. AT-41470 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W at 1 GHz , makes this device easy to use as a low noise amplifier.

The AT-41470 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of AT-41470.