Transistors Bipolar (BJT) Transistor Si
AT-41435G: Transistors Bipolar (BJT) Transistor Si
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 12 V |
Emitter- Base Voltage VEBO : | 1.5 V | Maximum DC Collector Current : | 0.06 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single Dual Emitter |
Maximum Operating Frequency : | 8000 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | Case 35 micro-X |
Packaging : | Bulk |
Technical/Catalog Information | AT-41435G |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 4GHz |
Current - Collector (Ic) (Max) | 60mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 8V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Gain | 18.5dB ~ 10dB |
Power - Max | 500mW |
Compression Point (P1dB) | 19dBm ~ 18.5dBm |
Package / Case | * |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AT 41435G AT41435G 516 1856 ND 5161856ND 516-1856 |