AT-41435

Features:

• Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Cost Effective Ceramic
Microstrip Package





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	60
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	200
TSTG	Storage Temperature	°C	-65 to 200

Description

Hewlett-Packard's AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron em-itter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger inter-digitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise a-nd moderate power applications.AT-41435 is designed for use in low noise, wideband amplifier, mixer and os-cillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W at 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-41435 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) pro-cess. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of AT-41435.