AT-41411

Features:

• Low Noise Figure:
  1.4 dB Typical at 1.0 GHz
  1.8 dB Typical at 2.0 GHz
• High Associated Gain:
  18.0 dB Typical at 1.0 GHz
  13.0 dB Typical at 2.0 GHz
• High Gain-Bandwidth
   Product: 7.0 GHz Typical f_T
• Low Cost Surface Mount
   Plastic Package
• Tape-and-Reel Packaging
   Option Available^[1]



Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	50
PT	Power Dissipation [2,3]	mW	225
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The SOT-143 is an industry standard and is compatible with high volume surface mount assembly techniques. The 4 micron emitterto-emitter pitch enables AT-41411 to be used in many different functions. The 14 emitter finger inter-digitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise
and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscill -ator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W in the 1 to 2GHz
frequency range, makes this device easy to use as a low noise amplifier.

The AT-41411 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT pro-cess. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of AT-41411.