AT-41410

Features:

• Low Noise Figure:
  1.6 dB Typical at 2.0 GHz
  3.0 dB Typical at 4.0 GHz
• High Associated Gain:
  14.0 dB Typical at 2.0 GHz
  10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth
   Product: 8.0 GHz Typical f_T
• Hermetic, Gold-ceramic
   Microstrip Package



Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	60
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	200
TSTG	Storage Temperature	°C	-65 to 200

Description

Hewlett-Packard's AT-41410 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41410 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and mo-derate power applications. AT-41410 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF,UHF, and microwave frequencies. An optimum noise match near 50Ê W at 1 GHz , makes this device easy to use as a low noise amplifier.

The AT-41410 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device of AT-41410 uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.