AT-41400

Features:

• Low Noise Figure:
  1.6 dB Typical at 2.0 GHz
  3.0 dB Typical at 4.0 GHz
• High Associated Gain:
  14.5 dB Typical at 2.0 GHz
  10.5 dB Typical at 4.0 GHz
• High Gain-Bandwidth
  Product:
  9.0 GHz Typical f_T



Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	60
PT	Power Dissipation [2,3]	mW	500
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 200

Description

    Hewlett-Packard's AT-41400 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor AT-41400 with impedances that are easy to match for low noise and moderate power applications. AT-41400 is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 W at 1 GHz , makes this device easy to use as a low noise amplifier.

    The AT-41400 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz f_T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of AT-41400.