AT-33225

Features:

• 4.8 Volt Operation
• +31.0 dBm P_out @ 900 MHz,Typ.
• 70% Collector Efficiency @ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,Typ.
• -29 dBc IMD₃ @ P_out of 24 dBm per tone, 900 MHz, Typ.
• Internal Input Pre-Matching Facilitates Cascading
• 50% Smaller than SOT-223 Package



Application

• Output Power Device for AMPS and ETACS Handsets
• 900 MHz ISM



Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.4
VCBO	Collector-Base Voltage	V	16.0
VCEO	Collector-Emitter Voltage	V	9.5
IC	Collector Current	mA	640
PT	Power Dissipation [2]	mW	1.6
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett Packard's AT-33225 is a low cost, NPN power silicon bipolar junction transistor housed in a miniature MSOP-3 surface mount plastic package. This device is designed for use as an output device for AMPS and ETACS mobile phones. The AT-33225 features over 1 watt CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-33225 ideal for use in battery powered systems.

The AT-33225 is fabricated with Hewlett Packard's 10 GHz F_t Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device of AT-33225 uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.