AT-32033

Features:

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB G_A
AT-32033: 1 dB NF, 12.5 dB G_A
• Characterized for End-Of- Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available^[1]





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	11
VCEO	Collector-Emitter Voltage	V	5.5
IC	Collector Current	mA	32
PT	Power Dissipation [2,3]	mW	200
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett Packard's AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the3 lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger AT-32033 interdigitated geometry yields an easy to match to and extremely fast transistor AT-32033 with moderate power, low noise resistance, and low operating
currents.

Optimized performance of AT-32033 at 2.7V makes these devices ideal for use in 900MHz,1.8GHz, and 2.4GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns of AT-32033 are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard's 10 GHz f_t, 30 GHz fMAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device of AT-32033 uniformity, performance and reliability are produced by the use of ion-implantation,selfalignment techniques, and gold metalization in the fabrication of these devices.