Transistors Bipolar (BJT) Transistor Si Low Current
AT-32011-TR1G: Transistors Bipolar (BJT) Transistor Si Low Current
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 5.5 V |
Emitter- Base Voltage VEBO : | 1.5 V | Maximum DC Collector Current : | 0.032 A |
DC Collector/Base Gain hfe Min : | 70 at 2 mA at 2.7 V | Configuration : | Single Dual Emitter |
Maximum Operating Frequency : | 30000 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-143 |
Packaging : | Reel |
Technical/Catalog Information | AT-32011-TR1G |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 1dB ~ 1.3dB @ 900MHz |
Current - Collector (Ic) (Max) | 32mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 2.7V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Gain | 12.5dB ~ 14dB |
Power - Max | 200mW |
Compression Point (P1dB) | 14.5dB |
Package / Case | SOT-143-4, TO-253-4 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AT 32011 TR1G AT32011TR1G 516 1564 2 ND 51615642ND 516-1564-2 |