AT-30533

Features:

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB GA
AT-30533: 1.1 dB NF, 13 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available^[1]





Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	11
VCEO	Collector-Emitter Voltage	V	5.5
IC	Collector Current	mA	8
PT	Power Dissipation [2]	mW	100
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett-Packard's AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been opti-mized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wire-less markets. The AT-30533 uses the 3 lead SOT-23, while the AT-30511 places the same die in the higher perfor-mance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high per-formance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an ex-tremely fast transistor with high gain and low operating currents.

Optimized performance at 2.7 V makes AT-30533 ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery ope-rated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at a 2.7 V, 1 mA bias. Voltage breakdowns are high eno-ugh for use at 5 volts. High gain capability at 1 V, 1 mA makes AT-30533 a good fit for 900 MHz pager appli-cations.

The AT-30533 series bipolar transistors are fabricated using an optimized version of Hewlett- Packard's 10GHz f _T, 30 GHz f_MAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent de-vice uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.