AT-00500

The AT-00500 is a kind of high performance NPN silicon bipolar transistor chip designed for use in wide band amplifier and oscillator applications operating over VHF,UHF and microwave frequencies.There are some features of AT-00500 as follows.First is 16.0 dBm typical P1 dB at 2.0 GHz,The second is 11.5 dB typical G1 dB at 2.0 GHz.Then is 2.5 dB typical NF_O at 2.0 GHz.The last one is high gain bandwidth product:9.0 GHz typical f_T.

What comes next is about the absolute maximum ratings of AT-00500.The V_EBO (emitter-base voltage) is 1.5 V.The V_CBO (collector-base voltage) is 20 V.The V_CEO (collector-emitter voltage) is 12 V.The I_C (collector current) is 50 mA.The P_T (power dissipation) is 500 mW.The T_j (junction temperature) is 200.The T_STG (storage temperature) is from -65 to 200.

The following is about the electrical specifications of AT-00500 (T_A=25).The typical P_{1 dB} (power output @ 1 dB gain compression) is 16.0 dB at V_CE=8 V,I_C=20 mA,f=2.0 GHz.The typical G_{1 dB} (1 dB compression) is 11.5 dB at V_CE=8 V,I_C=20 mA,f=2.0 GHz.The typical NF_O (optimum noise figure) is 2.5 dB at V_CE=8 V,I_C=5 mA,f=2.0 GHz.The typical G_A (gain @ NF_O) is 10.5 dB at V_CE=8 V,I_C=5 mA,f=2.0 GHz.The typical f_T (gain bandwidth product) is 9.0 GHz at V_CE=8 V,I_C=20 mA.The minimum h_FE (forward current transfer ratio) is 30,the typical is 150 and the maximum is 300 at V_CE=8 V,I_C=20 mA.The maximum ICBO (collector cutoff current) is 0.2 A at V_CB=2 V.The maximum I_EBO (emitter cutoff current) is 1.0 A at V_EB=1 V.The typical C_CB (collector base capacitance) is 0.45 pF at V_CB=8 V,f=1 MHz.