Features: SpecificationsDescriptionASP-0955 is a large signal,Class C common base,NPN silicon bipolar power transistor,housed in a BeO flange package for excellent thermal transfer.This device is designed for use as a 55 W driver or output amplifier for base station applications in cellular teleph...
ASP-0955: Features: SpecificationsDescriptionASP-0955 is a large signal,Class C common base,NPN silicon bipolar power transistor,housed in a BeO flange package for excellent thermal transfer.This device is de...
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ASP-0955 is a large signal,Class C common base,NPN silicon bipolar power transistor,housed in a BeO flange package for excellent thermal transfer.This device is designed for use as a 55 W driver or output amplifier for base station applications in cellular telephone systems operating in the 830 to 960 MHz frequency range.There are some features of ASP-0955 as follows.First is power out which is 55 W.The second is 25 V voltage.Then is efficiency:50% Min.The last one is 4.3:1 load mismatch tolerance.
What comes next is about the absolute maximum ratings of ASP-0955.The VEBO (emitter-base voltage) is 4.0 V.The VCES (collector-emitter voltage) is 50 V.The IC (collector current) is 8.0 A.The PT (power dissipation) is 115 W.The Tj (junction temperature) is 200.The TSTG (storage temperature) is from -65 to 150.
The following is about the electrical specifications of ASP-0955(TA=25).The minimum Pout (output power) is 55 W and the typical is 58 W at VCE=25 V,Pin=7 W,f=900 MHz.The minimum GP (power gain) is 8.9 dB and the typical is 9.2 dB at VCE=25 V,Pin=7 W,f=900 MHz.The minimum C (collector efficiency) is 50% and the typical is 55% at VCE=25 V,Pin=7 W,f=900 MHz.The minimum load mismatch tolerance is 4.3:1 at VCE=25 V,rated Pout,f=900 MHz.The minimum BVCEO (collector-emitter voltage) is 24 V and the typical is 28 V at VEB=open,IC=50 mA.The minimum BVCES (collector-emitter voltage) is 50 V and the typical is 55 V at VEB=0 V,IC=100 mA.The minimum BVEBO (emitter-base voltage) is 3.5 V and the typical is 4.5 V at VCB=open,IE=15 mA.The minimum hFE (forward current transfer ratio) is 20,the typical is 60 and the maximum is 120 at VCE=5 V,IC=3 A.The typical ICES (collector leakage current) is 1 mA and the maximum is 15 mA at VCE=26 V.The typical COB (collector-base capacitance) is 62 pF at f=1 MHz,VCB=25 V,IE=0 mA.