Features: • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior ...
ASM2P3805X: Features: • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching• Generation 4 IGBT design provides tighter...
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Parameter |
Max. |
Units | |
VCES |
Collector-to-Emitter Breakdown Voltage |
600 |
V |
IC @ TC = 25 |
Continuous Collector Current |
85 |
A |
IC @ TC = 100 |
Continuous Collector Current |
60 | |
ICM |
Pulsed Collector Current |
200 | |
ILM |
Clamped Inductive Load Current |
200 | |
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
EARV | Reverse Voltage Avalanche Energy |
180 |
mJ |
PD @ TC = 25 |
Maximum Power Dissipation |
350 |
W |
PD @ TC = 100 |
Maximum Power Dissipation |
140 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case |