Features: ·High burnout resistance ·Low noise figure· Hermetically sealed package Specifications IF 20mA VR 1.0V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55°C to +150 °C TSTG -55°C to +150 °CDescriptionThe ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating Fr...
ASI1N415E: Features: ·High burnout resistance ·Low noise figure· Hermetically sealed package Specifications IF 20mA VR 1.0V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55°C to +150 °C TSTG -55°C...
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IF | 20mA |
VR | 1.0V |
PDISS |
2.0 (ERGS) @ TC = 25 °C |
TJ |
-55°C to +150 °C |
TSTG | -55°C to +150 °C |