Features: ·High burnout resistance·Low noise figure·Hermetically sealed packageSpecifications IF 20mA VR 1.0V PDISS 5.0 (ERGS) @ TC = 25 C TJ -55°C to +150 °C TSTG -55°C to +150 °CDescriptionThe ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8....
ASI1N23WE: Features: ·High burnout resistance·Low noise figure·Hermetically sealed packageSpecifications IF 20mA VR 1.0V PDISS 5.0 (ERGS) @ TC = 25 C TJ -55°C to +150 °C TSTG -55°C to +...
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IF | 20mA |
VR | 1.0V |
PDISS |
5.0 (ERGS) @ TC = 25 C |
TJ |
-55°C to +150 °C |
TSTG | -55°C to +150 °C |