ASI1N23WE

Features: ·High burnout resistance·Low noise figure·Hermetically sealed packageSpecifications IF 20mA VR 1.0V PDISS 5.0 (ERGS) @ TC = 25 C TJ -55°C to +150 °C TSTG -55°C to +150 °CDescriptionThe ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8....

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SeekIC No. : 004288725 Detail

ASI1N23WE: Features: ·High burnout resistance·Low noise figure·Hermetically sealed packageSpecifications IF 20mA VR 1.0V PDISS 5.0 (ERGS) @ TC = 25 C TJ -55°C to +150 °C TSTG -55°C to +...

floor Price/Ceiling Price

Part Number:
ASI1N23WE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/22

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Product Details

Description



Features:

· High burnout resistance
·Low noise figure
· Hermetically sealed package



Specifications

IF 20mA
VR 1.0V

PDISS


5.0 (ERGS) @ TC = 25  C
TJ

-55°C to +150 °C
TSTG
-55°C to +150 °C



Description

The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.


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