Features: ·Extermely thin package·Low stored charge ·Majority carrier conductionSpecifications PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Repetitive peak reverse voltage VRM 45 V Continuous reverse voltage VR 40 V Mean rectifying current IO 100...
ASD501V: Features: ·Extermely thin package·Low stored charge ·Majority carrier conductionSpecifications PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Repetitive peak reverse voltage VRM ...
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PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
Repetitive peak reverse voltage | VRM | 45 | V | |||
Continuous reverse voltage | VR | 40 | V | |||
Mean rectifying current | IO | 100 | mA | |||
Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) |
IFSM | 1000 | mA | ||
Capacitance between terminals | f=1MHz and applied 10VDC reverse voltage | CT | 20 | pF | ||
Storage temperature | TJ | -40 | +125 | |||
Operating temperature | TSTG | -40 | +125 |