Features: IO=200mA VR=40V - Designed for mounting on small surface. - Extremely thin package. - Low leakage current (IR=0.1uA typ. @VR=10V). - Majority carrier conduction. - Lead-free deviceSpecifications Symbol Parameter Conditions Min Typ Max Unit VRRM Repetitive peak rever...
ASB0240: Features: IO=200mA VR=40V - Designed for mounting on small surface. - Extremely thin package. - Low leakage current (IR=0.1uA typ. @VR=10V). - Majority carrier conduction. - Lead-free deviceSpecific...
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Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
VRRM | Repetitive peak reverse voltage | - | - | 45 | V | ||
VR | Reverse voltage | - | - | 40 | V | ||
IO | Average forward current | - | - | 200 | mA | ||
IFSM | Forward current, surge peak | 0603 |
8.3ms single half sine-wave superimposed on rate load (JEDEC method) |
- | 2000 | - | mA |
1005 | - | 3000 | - | ||||
PD | Power Dissipation mW | 0603 |
- | - | 150 | mW | |
1005 | - | - | 200 | ||||
TSTG | Storage temperature | -40 | - | +125 | |||
TJ | Junction temperature | -40 | - | +125 |