AS58C1001F-15IT

Features: High speed: 150, 200, and 250ns Data Retention: 10 Years Low power dissipation, active current (20mW/MHz (TYP)),standby current (100W(MAX)) Single +5V (+10%) power supply Data Polling and Ready/Busy Signals Erase/Write Endurance (10,000 cycles in a page mode) Software Data protection Alg...

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SeekIC No. : 004288396 Detail

AS58C1001F-15IT: Features: High speed: 150, 200, and 250ns Data Retention: 10 Years Low power dissipation, active current (20mW/MHz (TYP)),standby current (100W(MAX)) Single +5V (+10%) power supply Data Polling and ...

floor Price/Ceiling Price

Part Number:
AS58C1001F-15IT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

 High speed:  150, 200, and 250ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz (TYP)),standby current (100W(MAX))
Single +5V (+10%) power supply
Data Polling and Ready/Busy Signals
  Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
 Data Protection Circuitry during power on/off
  Hardware Data Protection with RES pin
Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size



Pinout

  Connection Diagram


Specifications

Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.....................-0.6V to +7.0V1
Storage Temperature ...................................-65°C to +150°C
Operating Temperature Range....................-55 °C to +125 °C
Soldering Temperature Range........................................260 °C
Maximum Junction Temperature**................................+150°C
Power Dissipation...............................................................1.0W



Description

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM)organized as 131, 072 x 8 bits.  The AS58C1001 is capable or in system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consump-tion, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology.

AS58C1001F-15IT has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58C1001 features Data Polling and a Ready/Busy signal to indicate completion of erase and programming operations.

This EEPROM provides several levels of data protection.  Hard-ware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off.Software data protection is implemented using JEDEC Optional Stan-dard algorithm.

The AS58C1001 is designed for high reliability in the most de-manding applications.  Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the Page Mode.




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