AS018M2-00

Features:

Broadband, DC18 GHz
High Isolation, Low Loss, Fast Switching
100% On-Wafer RF and DC Testing
 100% Visual Inspection to MIL-STD-883 MT 2010


Specifications

Characteristic	Value
RF Input Power (RF In)	1 W
Control Voltage (VC)	+0.2 V, -10 V
Operating Temperature (TOP)	-55°C to +125°C
Storage Temperature (TST)	-65°C to +150°C
Thermal Resistance (JC)	25°C/W

Description

The AS018M2-00 GaAs SPDT matched MMIC FET switch chip is ideal for applications requiring low loss, high isolation and/or broadband operation. The GaAs MMIC AS018M2-00 employs three shunt and two series FETs per arm for low loss, high isolation switching together with a 50 load which is switched into the high isolation arm for low return loss. Power consumption of AS018M2-00 is very low, typically 75 A at -5 V. While recommended for operation up to 18 GHz, the switch performs well through 22 GHz.