ARS35B

Rectifiers 35A,100V,High Crnt SILASTIC Rect

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ARS35B Picture
SeekIC No. : 00173360 Detail

ARS35B: Rectifiers 35A,100V,High Crnt SILASTIC Rect

floor Price/Ceiling Price

US $ .11~.11 / Piece | Get Latest Price
Part Number:
ARS35B
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~5000
  • Unit Price
  • $.11
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Packaging : Bulk    

Description

Product :
Configuration :
Reverse Voltage :
Forward Voltage Drop :
Recovery Time :
Forward Continuous Current :
Max Surge Current :
Reverse Current IR :
Mounting Style :
Package / Case :
Packaging : Bulk


Features:

Plastic material used carries Underwriters Laboratory Classification 94V-0
Low cost construction utilizing void-free molded plastic technique
Low cost
Diffused junction
Low leakage
High surge capability
 High temperature soldering guaranteed: 260for 10 seconds



Specifications

Type Number
Symbol
ARS35A
ARS35B
ARS35D
ARS35G
ARS35J
ARS35K
ARS35M
Units
AR35A
AR35B
AR35D
AR35G
AR35J
AR35K
AR35M
Maximum Recurrent Peak Revere Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
@Tc = 150
I(AV)
35
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) at TJ=150
IFSM
500
A
Maximum Instantaneous Forward Voltage
@ 35A
VF
1.0
V
Maximum DC Reverse Current @ Tc=25
at Rated DC Blocking Voltage @ Tc=125
IR
5.0
250
uA
uA
Typical Reverse Recovery Time (Note 2)
Trr
3.0
uS
Typical Junction Capacitance ( Note 1 )
TJ=25
Cj
300
pF
Typical Thermal Resistance ( Note 3 )
RJC
1.0
/W
Operating and Storage Temperature Range
TJ, TSTG
-50 to +175
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
            2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
           3. Thermal Resistance from Junction to Case, Singe Side Cooled.



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