Features: * Specified 65 Volt, 81.36 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 100 Watts. * Low Vth thermal coefficient.* Gain = 13dB (Class AB) * Low Thermal Resistance.* Efficiency = 75% (Class C) * Optimized SOA for Superior Ruggedness.Specifications ...
ARF464A: Features: * Specified 65 Volt, 81.36 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 100 Watts. * Low Vth thermal coefficient.* Gain = 13dB (Class AB) * Low Thermal Resista...
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. |
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Symbol | Parameter | ARF464A/464B | UNIT |
VDSS | Drain-Source Voltage | 200 | Volts |
V DGO |
Drain-Gate Voltage | 200 | |
I D |
Continuous Drain Current @ TC = 25 °C |
15 | Amps |
V GS |
Gate-Source Voltage | ±30 |
Volts |
P D |
Total Power Dissipation @ TC = 25 °C |
180 | Watts |
R JC |
Junction to Case | 0.70 | °C/W |
T ,T J STG |
Operating and Storage Junction Temperature Range | -55 to 150 | °C |
T L |
Lead Temperature: 0.063" from Case for 10 Sec. | 300 |
The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. ARF464A have been
optimized for both linear and high efficiency classes of operation.