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ARF449B

Features: * Low Cost Common Source RF Package.* Specified 150 Volt, 81.36 MHz Characteristics:* Very High Breakdown for Improved Ruggedness.* Output Power = 150 Watts.* Low Thermal Resistance.* Gain = 13dB (Class C)* Nitride Passivated Die for Improved Reliability.* Efficiency = 75%Specifications ...

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ARF449B: Features: * Low Cost Common Source RF Package.* Specified 150 Volt, 81.36 MHz Characteristics:* Very High Breakdown for Improved Ruggedness.* Output Power = 150 Watts.* Low Thermal Resistance.* Gain...

ARF449B Data Sheet

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Part Number:
ARF449B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

* Low Cost Common Source RF Package.
* Specified 150 Volt, 81.36 MHz Characteristics:
* Very High Breakdown for Improved Ruggedness.
* Output Power = 150 Watts.
* Low Thermal Resistance.
* Gain = 13dB (Class C)
* Nitride Passivated Die for Improved Reliability.
* Efficiency = 75%


Specifications

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter ARF449A/449B UNIT
VDSS Drain-Source Voltage 450 Volts
V
DGO		 Drain-Gate Voltage 450
I
D		 Continuous Drain Current @ TC = 25 °C

 9 Amps
V
GS		 Gate-Source Voltage
±30		 Volts
P
D		 Total Power Dissipation @ TC = 25 °C

 165 Watts
R
JC		 Junction to Case 0.76 °C/W
T ,T
J STG		 Operating and Storage Junction Temperature Range -55 to 150 °C
T
L		 Lead Temperature: 0.063" from Case for 10 Sec. 300



Description

The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.


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