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ARF444

Features: * Specified 300 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 300 Watts. * Very High Breakdown for Improved Ruggedness.* Gain = 18.7dB (Typ.) * Low Thermal Resistance.* Efficiency = 83% (Typ.) * Nitride Passivated Die for Improved Reliability.Speci...

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SeekIC No. : 004287962 Detail

ARF444: Features: * Specified 300 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 300 Watts. * Very High Breakdown for Improved Ruggedness.* Gain = 18.7dB (Typ.) * Low ...

ARF444 Data Sheet

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Part Number:
ARF444
Supply Ability:
5000

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Upload time: 2024/11/23

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Product Details

Description



Features:

* Specified 300 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.
* Output Power = 300 Watts. * Very High Breakdown for Improved Ruggedness.
* Gain = 18.7dB (Typ.) * Low Thermal Resistance.
* Efficiency = 83% (Typ.) * Nitride Passivated Die for Improved Reliability.


Specifications

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter ARF444/445 UNIT
VDSS Drain-Source Voltage 900 Volts
V
DGO		 Drain-Gate Voltage 900
I
D		 Continuous Drain Current @ TC = 25 °C

 6.5 Amps
V
GS		 Gate-Source Voltage
±30		 Volts
P
D		 Total Power Dissipation @ TC = 25 °C

 208 Watts
R
JC		 Junction to Case 0.60 °C/W
T ,T
J STG		 Operating and Storage Junction Temperature Range -55 to 150 °C
T
L		 Lead Temperature: 0.063" from Case for 10 Sec. 300



Description

The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,
commercial, medical and industrial RF power amplifier applications.


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