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ARF442

Features: * Specified 100 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 200 Watts. * Very High Breakdown for Improved Ruggedness.* Gain = 22dB (Typ.) * Low Thermal Resistance.* Efficiency = 73% (Typ.) * Nitride Passivated Die for Improved Reliability.Specifi...

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SeekIC No. : 004287960 Detail

ARF442: Features: * Specified 100 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.* Output Power = 200 Watts. * Very High Breakdown for Improved Ruggedness.* Gain = 22dB (Typ.) * Low Th...

ARF442 Data Sheet

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Part Number:
ARF442
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

* Specified 100 Volt, 13.56 MHz Characteristics: * Low Cost Common Source RF Package.
* Output Power = 200 Watts. * Very High Breakdown for Improved Ruggedness.
* Gain = 22dB (Typ.) * Low Thermal Resistance.
* Efficiency = 73% (Typ.) * Nitride Passivated Die for Improved Reliability.


Specifications

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter ARF442/443 UNIT
VDSS Drain-Source Voltage 300 Volts
V
DGO		 Drain-Gate Voltage 300
I
D		 Continuous Drain Current @ TC = 25 °C

 8 Amps
V
GS		 Gate-Source Voltage
±30		 Volts
P
D		 Total Power Dissipation @ TC = 25 °C

 167 Watts
R
JC		 Junction to Case 0.75 °C/W
T ,T
J STG		 Operating and Storage Junction Temperature Range -55 to 150 °C
T
L		 Lead Temperature: 0.063" from Case for 10 Sec. 300



Description

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.


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