APTM50UM19SG

MOSFET N-CH 500V 163A J3

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SeekIC No. : 004130727 Detail

APTM50UM19SG: MOSFET N-CH 500V 163A J3

floor Price/Ceiling Price

Part Number:
APTM50UM19SG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 163A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) @ Vds: 22400pF @ 25V
Power - Max: 1136W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: J3 Module
Supplier Device Package: Module    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 500V
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Vgs(th) (Max) @ Id: 5V @ 10mA
Power - Max: 1136W
Current - Continuous Drain (Id) @ 25° C: 163A
Gate Charge (Qg) @ Vgs: 492nC @ 10V
Input Capacitance (Ciss) @ Vds: 22400pF @ 25V
Supplier Device Package: Module
Package / Case: J3 Module
Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V


Parameters:

Technical/Catalog InformationAPTM50UM19SG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C163A
Rds On (Max) @ Id, Vgs19 mOhm @ 81.5A, 10V
Input Capacitance (Ciss) @ Vds 22400pF @ 25V
Power - Max1136W
PackagingBulk
Gate Charge (Qg) @ Vgs492nC @ 10V
Package / CaseJ3 Module
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM50UM19SG
APTM50UM19SG



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