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APTM20UM09SG

MOSFET N-CH 200V 195A J3

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SeekIC No. : 004130874 Detail

APTM20UM09SG: MOSFET N-CH 200V 195A J3

APTM20UM09SG Data Sheet

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Part Number:
APTM20UM09SG
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25° C: 195A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) @ Vgs: 217nC @ 10V Input Capacitance (Ciss) @ Vds: 12300pF @ 25V
Package / Case : PGBA-516 Power - Max: 780W
Mounting Type: Chassis Mount Package / Case: J3 Module
Supplier Device Package: Module    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 200V
Vgs(th) (Max) @ Id: 5V @ 4mA
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Power - Max: 780W
Supplier Device Package: Module
Package / Case: J3 Module
Current - Continuous Drain (Id) @ 25° C: 195A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V
Gate Charge (Qg) @ Vgs: 217nC @ 10V
Input Capacitance (Ciss) @ Vds: 12300pF @ 25V


Parameters:

Technical/Catalog InformationAPTM20UM09SG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C195A
Rds On (Max) @ Id, Vgs9 mOhm @ 74.5A, 10V
Input Capacitance (Ciss) @ Vds 12300pF @ 25V
Power - Max780W
PackagingBulk
Gate Charge (Qg) @ Vgs217nC @ 10V
Package / CaseJ3 Module
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM20UM09SG
APTM20UM09SG



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