APTM10TAM09FPG

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Packaging: Bulk
Package / Case: SP6
Gate Charge (Qg) @ Vgs: 350nC @ 10V
Power - Max: 390W
FET Type: 6 N-Channel (3-Phase Leg)
Supplier Device Package: SP6-P
Current - Continuous Drain (Id) @ 25° C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Input Capacitance (Ciss) @ Vds: 9875pF @ 25V


Features:

• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Specifications

Symbol	Parameter	Max ratings	Unit
VDSS ID IDM VGS RDSon PD IAR EAR EAS	Drain - Source Breakdown Voltage Tc = 25°C Continuous Drain Current Tc = 80°C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy	100 139 100 430 ±30 10 390 100 50 3000	V A V mΩ W A mJ

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com