APTM10TAM09FPG

MOSFET MOD TRPL PHASE LEG SP6-P

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SeekIC No. : 004130788 Detail

APTM10TAM09FPG: MOSFET MOD TRPL PHASE LEG SP6-P

floor Price/Ceiling Price

US $ 107.44~107.44 / Piece | Get Latest Price
Part Number:
APTM10TAM09FPG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $107.44
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: 6 N-Channel (3-Phase Leg) FET Feature: Standard
Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25° C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) @ Vds: 9875pF @ 25V
Package / Case : PGBA-516 Power - Max: 390W
Mounting Type: Chassis Mount Package / Case: SP6
Supplier Device Package: SP6-P    

Description

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Packaging: Bulk
Package / Case: SP6
Gate Charge (Qg) @ Vgs: 350nC @ 10V
Power - Max: 390W
FET Type: 6 N-Channel (3-Phase Leg)
Supplier Device Package: SP6-P
Current - Continuous Drain (Id) @ 25° C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Input Capacitance (Ciss) @ Vds: 9875pF @ 25V


Features:

• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration



Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control



Specifications

Symbol
Parameter
Max ratings
Unit
VDSS
ID

IDM
VGS
RDSon
PD
IAR
EAR
EAS
Drain - Source Breakdown Voltage
Tc = 25°C Continuous Drain Current
Tc = 80°C
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation Tc = 25°C
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
100
139
100
430
±30
10
390
100
50
3000
V

A

V
mΩ
W
A
mJ

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com


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