APTM10HM19FT3G

Series: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 70A
Gate Charge (Qg) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds: 5100pF @ 25V
Power - Max: 208W
Package / Case: SP3
Supplier Device Package: SP3


Features:

• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration


Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control


Specifications

Symbol	Parameter	Max ratings	Unit
VDSS ID IDM VGS RDSon PD IAR EAR EAS	Drain - Source Breakdown Voltage Tc = 25°C Continuous Drain Current Tc = 80°C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy	100 70 50 300 ±30 21 208 75 30 1500	V A V mΩ W A mJ

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com