APTM100DA33T1G, US $ 28.05-28.05, APTM100DA33T1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 004130837 Detail

APTM100DA33T1G: MOSFET N-CH 1000V 23A SP1

APTM100DA33T1G Data Sheet

US $ 28.05~28.05 / Piece | Get Latest Price

Part Number:: APTM100DA33T1G
Mfg:
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Series:	-	Manufacturer:	Microsemi Power Products Group
FET Type:	MOSFET N-Channel, Metal Oxide	FET Feature:	Standard
Drain to Source Voltage (Vdss):	1000V (1kV)	Current - Continuous Drain (Id) @ 25° C:	23A
Rds On (Max) @ Id, Vgs:	396 mOhm @ 18A, 10V	Vgs(th) (Max) @ Id:	5V @ 2.5mA
Gate Charge (Qg) @ Vgs:	305nC @ 10V	Input Capacitance (Ciss) @ Vds:	7868pF @ 25V
Power - Max:	390W	Package / Case :	PGBA-516
Mounting Type:	Chassis Mount	Package / Case:	SP1
Supplier Device Package:	SP1

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Drain to Source Voltage (Vdss): 1000V (1kV)
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 305nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 23A
Package / Case: SP1
Supplier Device Package: SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 7868pF @ 25V
Power - Max: 390W

Parameters:

Technical/Catalog Information	APTM100DA33T1G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	396 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	7868pF @ 25V
Power - Max	390W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	305nC @ 10V
Package / Case	SP1 Module
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APTM100DA33T1G APTM100DA33T1G

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