APTM100DA18TG

MOSFET N-CH 1000V 43A SP4

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SeekIC No. : 004130836 Detail

APTM100DA18TG: MOSFET N-CH 1000V 43A SP4

floor Price/Ceiling Price

US $ 57.72~57.72 / Piece | Get Latest Price
Part Number:
APTM100DA18TG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $57.72
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25° C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) @ Vds: 10400pF @ 25V
Package / Case : PGBA-516 Power - Max: 780W
Mounting Type: Chassis Mount Package / Case: SP4
Supplier Device Package: SP4    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Drain to Source Voltage (Vdss): 1000V (1kV)
Package / Case: SP4
Supplier Device Package: SP4
Packaging: Bulk
Power - Max: 780W
Vgs(th) (Max) @ Id: 5V @ 5mA
Current - Continuous Drain (Id) @ 25° C: 43A
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
Gate Charge (Qg) @ Vgs: 372nC @ 10V
Input Capacitance (Ciss) @ Vds: 10400pF @ 25V


Parameters:

Technical/Catalog InformationAPTM100DA18TG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs210 mOhm @ 21.5A, 10V
Input Capacitance (Ciss) @ Vds 10400pF @ 25V
Power - Max780W
PackagingBulk
Gate Charge (Qg) @ Vgs372nC @ 10V
Package / CaseSP4 Module
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM100DA18TG
APTM100DA18TG



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