APTM100DA18T1G

MOSFET N-CH 1000V 40A SP1

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SeekIC No. : 004130835 Detail

APTM100DA18T1G: MOSFET N-CH 1000V 40A SP1

floor Price/Ceiling Price

US $ 36.79~36.79 / Piece | Get Latest Price
Part Number:
APTM100DA18T1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~14
  • Unit Price
  • $36.79
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25° C: 40A
Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) @ Vgs: 570nC @ 10V Input Capacitance (Ciss) @ Vds: 14800pF @ 25V
Power - Max: 657W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP1
Supplier Device Package: SP1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Drain to Source Voltage (Vdss): 1000V (1kV)
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 40A
Input Capacitance (Ciss) @ Vds: 14800pF @ 25V
Gate Charge (Qg) @ Vgs: 570nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V
Power - Max: 657W


Parameters:

Technical/Catalog InformationAPTM100DA18T1G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs216 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 14800pF @ 25V
Power - Max657W
PackagingBulk
Gate Charge (Qg) @ Vgs570nC @ 10V
Package / CaseSP1 Module
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM100DA18T1G
APTM100DA18T1G



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