APTM100A13D Selling Leads, Price trend, APTM100A13D DataSheet download, circuit diagram from SeekIC.com

Features: • Power MOS 7® MOSFETs- Low RDSon- Low input and Miller capacitance- Low gate charge- Fast intrinsic reverse diode- Avalanche energy rated- Very rugged• Kelvin source for easy drive• Very low stray inductance- Symmetrical design- M5 power connectors• High leve...

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SeekIC No. : 004287607 Detail

APTM100A13D: Features: • Power MOS 7® MOSFETs- Low RDSon- Low input and Miller capacitance- Low gate charge- Fast intrinsic reverse diode- Avalanche energy rated- Very rugged• Kelvin source for e...

APTM100A13D Data Sheet

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Part Number:: APTM100A13D
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Application

• Zero Current Switching resonant mode

Specifications

Symbol	Parameter		Max ratings	Unit
V_DSS	Drain - Source Breakdown Voltage		1000	V
I_D	Continuous Drain Current	Tc = 25°C	65	A
I_D	Continuous Drain Current	Tc = 85°C	49
I_DM	Pulsed Drain current		240
V_GS	Gate - Source Voltage		±30	V
R_DSon	Drain - Source ON Resistance		130	m
P_D	Maximum Power Dissipation	Tc = 25°C	1250	W
I_AR	Avalanche current (repetitive and non repetitive)		24	A
E_AR	Repetitive Avalanche Energy		30	mJ
E_AS	Single Pulse Avalanche Energy		1300	mJ

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APTM100A13D

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