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APTGT600DU60

Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche energy rated- RBSOA and SCSOA rated• Kelvin emitter for easy drive• Very low str...

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APTGT600DU60: Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Av...

APTGT600DU60 Data Sheet

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Part Number:
APTGT600DU60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration


Application

• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies


Specifications

Symbol
Parameter
Value
Unit
VCES
 Collector - Emitter Breakdown Voltage
600
V
IC
 Continuous Collector Current TC = 25°C
700*
A
TC = 80°C
600*
ICM
 Pulsed Collector Current TC = 25°C
800
VGB
 Gate Emitter Voltage
±20
V
PD
 Maximum Power Dissipation TC = 25°C
2300
W
RBSOA
 Reverse Bias Safe Operating Area Tj = 150°C
1200A @ 550V
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater
than 100°C for the connectors.


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