Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche energy rated- RBSOA and SCSOA rated• Kelvin emitter for easy drive• Very low str...
APTGT600DU60: Features: • Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Av...
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Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector - Emitter Breakdown Voltage |
600 |
V | |
IC |
Continuous Collector Current | TC = 25°C |
700* |
A |
TC = 80°C |
600* | |||
ICM |
Pulsed Collector Current | TC = 25°C |
800 | |
VGB |
Gate Emitter Voltage |
±20 |
V | |
PD |
Maximum Power Dissipation | TC = 25°C |
2300 |
W |
RBSOA |
Reverse Bias Safe Operating Area | Tj = 150°C |
1200A @ 550V |